采用双靶共溅射法,分别在不同衬底温度、沉积压强和溅射功率下制备了 Cd1-x Znx Te 多晶薄膜样品,并采用X射线衍射仪、X 射线荧光光谱仪、扫描电子显微镜等方法对制备的 Cd1-x Znx Te 薄膜的结构、成分、形貌和光电学性质进行测试分析。结果表明,300℃衬底温度下制备的Cd1-xZnxTe薄膜成分单一,立方相结构,生长致密,表面颗粒平均大小约50 nm,Cd1-x Znx Te薄膜在(111)晶面的2θ值及晶格常数与Zn组分呈线性关系。Cd1-x Znx Te薄膜的禁带宽度与组分x 值呈线性关系。随着气压从8 Pa降低至1 Pa,Cd1-x Znx Te薄膜的晶粒尺寸增加,生长更加致密。Cd1-xZnxTe薄膜的室温电导率约为8.61×10-11(Ω·cm)-1,呈弱P型。
Cd1-x Znx Te crystalline thin films were deposited by magnetron co-sputtering with ZnTe and CdTe targets at different temperatures,pressure and sputtering power.The properties of films were characterized by SEM,XRD and XRF to investigate the structure,composition and surface morphology.The optical and electri-cal properties of the films were also investigated.The results showed that the films prepared at 300 ℃ were cu-bic phase with a dense surface and an average particle size of about 50 nm.A linear relationship was obtained between Zn composition and lattice constant as well as Zn composition and the band gap of the film.With the decrease of the pressure from 8 to 1 Pa the grain size increased and a denser surface was appeared.The as-de-posited Cd1-xZnxTe polycrystalline films showed weak p-type conduction with the conductivity of about 8.61× 10-11 (Ω·cm)-1 at room temperature.
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