采用自主研发的碱性铜抛光液,使用前稀释50倍加入不同剂量 H2 O2配制成碱性铜精抛液。实验结果表明,随着 H2 O2含量的增加,铜的静态腐蚀速率(CuDR)、抛光速率(CuPR)以及阻挡层 Ta/TaN 均有小幅度的降低,但在 MIT854布线片上精抛实验结果表明,碟形坑随着 H2 O2含量的增加逐渐降低,加入5％(体积分数)H2 O2的精抛液,在粗抛实现初步平坦化后,精抛去除残余铜的过程中,能够实现不同线条尺寸的完全平坦化,碟形坑在工业要求范围内。研究结果表明,H2 O2含量的增加对速率影响不明显,但有利于铜布线片的平坦化。此规律对提高 CMP 全局平坦化具有极重要的作用。
The alkaline copper slurry which was made by out own,diluted (X50)as the copper clearing slurry and add different concentration H2 O2 into the slurry before used.Experiment results show that as the H2 O2 concentration increase,the dissolution rate and polish rate of copper,also the barrier films such as Ta/TaN re-moval rate have small decrease.But the experiment on the MIT854 pattern wafer in copper clearing step re-sults,the dishing values reduce with the H2 O2 concentration increase.The copper clearing slurry with 5vol%H2 O2 ,after achieved initial planarization,follow the copper clearing step for copper residue removal,the pat-tern wafer can achieved completely planarization of different linewidths,the dishing values can meet the indus-trial requirements.These rules paly an important role to achieve global planarization of CMP.
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