采用低压化学气相沉积法(LPCVD)制备了高质量的单层石墨烯薄膜,通过湿法转移将所制备的单层石墨烯无损覆盖到两条平行粘贴在Si O 2/Si衬底上的热释放胶带表面,胶带间距约500μm,进而对试样进行加热和切割,获得与Si O 2/Si 衬底紧密结合的石墨烯条带(约10000μm×500μm),最后采用掩膜法在石墨烯条带上蒸镀金电极,构建成背栅石墨烯场效应晶体管。该方法简单易行,电学性能测试结果表明,石墨烯与金电极具有良好的欧姆接触,室温下,石墨烯的空穴迁移率约为735 cm2/(V?s),且表现出了石墨烯所特有的双极性特征。背栅石墨烯场效应晶体管转移特性曲线表现出了滞回行为,且随着施加栅压的增大,滞回行为越来越显著,展示出高的性能可靠性。
High-quality mono-layer graphene films were prepared by use of the technique of low pressure chemi-cal vapor deposition (LPCVD).The as-prepared graphene was used to construct a back-gate mono-layer gra-phene field effect transistor by a simple process i.e.:The as-prepared mono-layer graphene was firstly trans-ferred onto the surface area of SiO2/Si substrate covered with two parallel arranged heat release tapes with a gap distance about 500μm.The graphene strip(about 10 000μm×500μm)closely combined with the SiO2/Si sub-strate was obtained by heating and cutting.Finally,the Au electrodes were deposited on the surface of graphene strip by use a mask.The results of electrical properties measurements showed that the graphene strip was in good ohm contact with Au electrodes.The hole mobility of graphene was up to 735 cm2/(V??s)at room tem-perature and the graphene exhibited an unique bipolar characteristic.The hysteresis behaviors in the transfer characteristics curves of back-gate mono-layer graphene field effect transistors were observed and become more obvious with the increase of gate voltage,which exhibited high properties reliability.
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