采用直流偏置应力法对蓝宝石衬底上的 In-AlN/GaN HEMT 器件的电流崩塌效应进行了研究。实验结果表明，在关态和开态应力后，器件直流特性明显退化，退化程度随偏置应力电压和应力时间的累积而增大。理论分析和器件仿真结果表明，关态应力引起的性能退化主要是由栅泄漏电流填充表面态形成的虚栅造成的；而开态应力引起的退化是沟道热电子被势垒层陷阱及表面态俘获产生的。因此，只有消除表面态和势垒层陷阱或者隔绝表面态形成的虚栅才能有效抑制电流崩塌。偏置应力引起的性能退化是可逆过程，在无外界激励时，经过10 d左右的静置，器件基本恢复初始性能。
Drain current collapses under DC-bias-induced stress in passivated InAlN/GaN high electron mobility transistor grown on sapphire substrate were investigated.The experimental results indicated that the degrada-tion of DC characteristics occurred after both the off-state stress and on-state stress,and the degradation degree increases with the accumulation of bias voltage and time.Theoretical analysis and device simulation results shown that the drain current collapse under the off-state stress was due to the virtual gate caused by surface state,while the collapse mechanism under the on-state stress was dominated by the hot-electron effect.In addi-tion,we found that the current collapse under bias-stress was a reversible process.The degraded current can al-most restore to the original values after ten days in the absence of any external exciting source.
参考文献
| [1] | Sun Haifeng;Alt A R;Benedickter H et al.100 nm-gate(Al,In)N/GaN HEMTs grown on SiC with FT=144 GHz[J].IEEE Electron Device Lett,2010,31(04):293-295. |
| [2] | Xie S;Feng Z;Liu B et al.Research and progress of AlInN/GaN high electron mobility transistor[J].Journal of Functional Materials,2011,42:784-787. |
| [3] | Qiu, Y.J.;Xu, Y.H.;Xu, R.M.;Lin, W.G. .Compact hybrid broadband GaN HEMT power amplifier based on feedback technique[J].Electronics Letters,2013(5):372-374. |
| [4] | Kizilbey O;Palamutcuogullari O;Yarman S B .3.5-3.8 GHz class-E balanced GaN HEMT power amplifier with 20W pout and 80% PAE[J].IEICE ELECTRONICS EXPRESS,2013,10(05):1-6. |
| [5] | Medjdoub F;Carlin J F;Gonschorek M.Can In-AlN/GaN be an alternative to high power/high tempera-ture AlGaN/GaN devices[A].,2006:1-4. |
| [6] | Yun Lijun,Wei Tongbo,Yan Jianchang,Liu Zhe,Wang Junxi,Li Jinmin.MOCVD epitaxy of InAlN on different templates[J].半导体学报,2011(09):24-28. |
| [7] | Crespo A;Bellott M;Chabak K et al.High frequency performance of Ga free barrier AlInN/GaN HEMT[J].Phys Status Solidi(c),2010,7(10):2433-2435. |
| [8] | Kuzmik J .Material and device issues of InAlN/GaN het-erostructures[J].ASDAM,2012,2012:45-50. |
| [9] | Yue, Y. .InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz[J].IEEE Electron Device Letters,2012(7):988-990. |
| [10] | Tirelli, S.;Lugani, L.;Marti, D.;Carlin, J.-F. .AlInN-Based HEMTs for Large-Signal Operation at 40 GHz[J].IEEE Transactions on Electron Devices,2013(10):3091-3098. |
| [11] | Kuzmik J;Pozzovivo G;Osternaier C et al.Analysis of degretion mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors[J].Journal of Applied Physics,2009,106(12):124503. |
| [12] | Nsele S D;Escotte L;Tartarin J G et al.Noise charac-teristics of AlInN/GaN HEMTs at microwave frequen-cies[J].IEEE Transactions on Electron Devices,2013,60(04):1372-1378. |
| [13] | Hwang, I.;Kim, J.;Chong, S.;Choi, H.-S. .Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs[J].IEEE Electron Device Letters,2013(12):1494-1496. |
| [14] | Jin D;Joh J;Krishnan S et al.Total current collapse in high-voltage GaN MIS-HEMTs induced by zener trap-ping[J].IEEE International Electron Devices Meeting,2013,6:2.1-6.2.4. |
| [15] | Joh J;Del A.Mechanisms for electrical degradation of GaN high electron mobility transistors[A].,2006:148-151. |
| [16] | Xie S;Feng Z;Liu B et al.DC characteristics of lattice-matched InAlN/AlN/GaN high electron mobility tran-sistors[J].Transactions of Tianjin University,2013,19(01):43-46. |
| [17] | Basu, S.;Singh, P. K.;Lin, S.-K.;Sze, P.-W.;Wang, Y.-H. .Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $hbox{Al}_{2}hbox{O}_{3}$ as a Gate Dielectric[J].IEEE Transactions on Electron Devices,2010(11):2978-2987. |
| [18] | Moradi M;Valizadeh P .Analytical modeling of current collapse in AlGaN/GaN HFETs according to the virtual gate concept[J].IEEE Transactions on Device and Ma-terials Reliability,2010,10(02):287-294. |
| [19] | Albrecht JD.;Ruden PP.;Farahmand M.;Brennan KF.;Wang RP. .Electron transport characteristics of GaN for high temperature device modeling[J].Journal of Applied Physics,1998(9):4777-4781. |
| [20] | Farahmand M;Garetto C;Bellotti E et al.Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system:binaries and terniaries[J].IEEE Transactions on Electron Devices,2001,48(03):535-542. |
| [21] | 谷文萍,郝跃,张进城,王冲,冯倩,马晓华.高场应力及栅应力下AlGaN/GaN HEMT器件退化研究[J].物理学报,2009(01):511-517. |
| [22] | Wan Xiaojia,Wang Xiaoliang,Xiao Hongling,Feng Chun,Jiang Lijuan,Qu Shenqi,Wang Zhanguo.Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors[J].半导体学报（英文版）,2013(10):43-45. |
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