采用直流磁控溅射法,以高纯铝(99．99％)为靶材,高纯氩气(99．999％)为起辉气体,在经机械抛光的单晶 Si 衬底上制备铝纳米颗粒薄膜.利用 X 射线衍射仪(XRD)、光学薄膜测厚仪、扫描电子显微镜(SEM)和四探针测试仪分别测试了铝纳米颗粒薄膜的晶相结构、薄膜厚度、表面形貌及电阻率.XRD 衍射图谱表明此薄膜为面心立方的多晶结构,择优取向为Al(111)晶面.随溅射功率由30 W 增至300 W,铝纳米颗粒薄膜的沉积速率由3．03 nm/min 增加至20．03 nm/min；而随溅射压强由1 Pa 增加至3 Pa,沉积速率由2．95 nm/min 降低到1．66 nm/min.在溅射功率为150 W,溅射压强为1．0 Pa 条件下制备的样品具有良好的晶粒分布.随溅射功率从80 W 增大到160 W,样品电阻率由4．0×10－7Ω· m 逐渐减小到1．9×10－7Ω·m；而随溅射压强从1 Pa 增至3 Pa,样品电阻率由1．9×10－7Ω·m 增加到7．1×10－7Ω·m.
Aluminum nano-particle films are successfully deposited on mechanically polished monocrystal silicon substrates by DC magnetron sputtering,where the highly pure aluminum(99.99%)was used as target with the argon(99.999%)as sputtering gas.The crystal structure,thickness,surface morphology and electrical resistivi-ty were studied by X-ray diffraction (XRD),optical thickness measuring,scanning electron microscopy (SEM) and four point probes meter,respectively.The XRD pattern showed that these Al nano-particle films had pre-ferred orientation of Al (1 1 1 )with fcc polycrystal structure.When sputtering power increased from 30 to 300 W,The deposition rate increased from 3.03 to 20.03 nm/min,while decreased from 2.95 to 1.66 nm/min when the sputtering pressure increased from 1 to 3 Pa.SEM images of surface morphology showed that the Al nano-particle films sputtered at 150 W and 1 Pa were perfect.With the sputtering power increased from 80 W to 1 60 W,the electrical resistivity decreased from 4.0 × 10 -7 Ω·m to 1.9 × 10 -7 Ω·m,while increased from 1.9 × 10 -7 Ω·m to 7.1 × 10 -7 Ω·m with the sputtering pressure increasing from 1 Pa to 3 Pa.
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