在石墨衬底上分别制备了具有(220)和(400)择优取向的多晶硅薄膜.首先利用磁控溅射技术直接在石墨衬底上制备非晶硅薄膜层，以及先制备 ZnO 过渡层，再在 ZnO 过渡层上制备非晶硅薄膜层；然后采用快速退火法对非晶硅薄膜晶化，使其形成多晶硅薄膜籽晶层.XRD 测试表明，未引入 ZnO 过渡层的多晶硅薄膜籽晶层具有高度(220)择优取向，而引入 ZnO 过渡层的多晶硅薄膜籽晶层具有高度(400)择优取向；最后在多晶硅籽晶层上通过对流辅助化学气相沉积(CoCVD)制备多晶硅薄膜.根据 SEM、XRD、拉曼测试表明，多晶硅薄膜的性质延续了多晶硅籽晶层的性质，未引入 ZnO 过渡层的样品，具有高度(220)择优取向.引入 ZnO 过渡层后的样品，具有高度(400)择优取向，(400)择优取向的转变有利于后续多晶硅薄膜太阳电池的制作.同时对 Si(220)和 Si (400)择优取向的形成原因做了初步分析.
The polycrystalline silicon (poly-Si)thin films with (220)and (400)preferred orientation were pre-pared respectively on graphite substrates.Two kinds of samples were prepared.First,amorphous silicon thin film was prepared directly on graphite substrate by magnetron sputtering technique,and second,the ZnO tran-sition layer was prepared before the deposition of amorphous silicon thin film.Both kinds of samples were an-nealed to prepare the poly-Si thin film seed layers by rapid annealing method.X-ray diffraction (XRD)measure-ments show that the silicon thin film seed layers without ZnO transition layer have highly (220)preferred orien-tation,and the silicon thin film seed layers with ZnO transition layer have highly (400)preferred orientation, after the rapid annealing.Then the poly-Si thin films were prepared by convection-assisted chemical vapor depo-sition (CoCVD)on the poly-Si thin film seed layers.According to the Raman,scanning electron microscope (SEM),and XRD measurements,the structures of the silicon films deposited by CoCVD succeed to the struc-tures of poly-Si seed layers.The samples without ZnO transition layer have highly (220)preferred orientation, and the samples with ZnO transition layer have highly (400)preferred orientation,the transformation of (400) preferred orientation was conducive to the subsequent production of poly-Si thin film solar cells.The mecha-nisms that the Si (220)and Si (400)preferred orientation were analyzed preliminarily.
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