采用旋涂技术、光刻技术、蒸发镀膜技术制备以图形化石墨烯∶聚合物复合薄膜为活性层,具有氧化铟锡/石墨烯∶聚合物/铝交叉型夹层结构的阻变器件.采用光刻胶为有机基体,实现阻变层的可图形化；通过优化石墨烯浓度,获得具有优良性能的可擦写非易失性阻变存储器件,讨论其阻变机制.实验表明,当石墨烯浓度为0．01％(质量分数)时,器件具有最佳的阻变特性,其开关比达8．9×103,且表现出良好的数据维持能力.
Resistance memory devices using patterned graphene∶polymer as active layerand with ITO (indium tin oxide)/graphene∶polymer/Al cross bar sandwich structure were fabricated by spin-coating,lithography and thermal evaporation.The patterned active layer was achieved by using photosensitive polymer as organic matrix. The graphene concentration was optimized to obtain the best rewritable nonvolatile memory effect.The mecha-nism for the resistance switch effect was also discussed.It was found that the device fabricated with the gra-phene concentration at 0.01wt% showed not only the best memory performance with a large on/off ratio of 8.9×10 3 ,but also satisfactory retention characteristics.Current-voltage analyswas suggests that it was the car-riers captured and released by graphene that lead to the resistance switch effect.
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