采用脉冲偏压电弧离子镀技术在不同工艺参数(弧电流、基体负偏压)水平下制备了一系列铜薄膜.利用金相显微镜、腐蚀失重试验和双向弯曲试验分别研究了弧电流和基体负偏压对铜薄膜组织结构、耐腐蚀性能和结合性能的影响.结果表明,弧电流由40 A 增加到80 A,薄膜表面颗粒含量明显增加,大颗粒尺寸由13．71μm 增加到19．36μm,膜层平均腐蚀速率降低；随着弧电流提高,薄膜结合性能先降低后提高,60 A 时膜层结合性能最理想；随着基体脉冲负偏压升高,薄膜结合性能提高,薄膜表面颗粒含量及其尺寸减小、负偏压达到200 V 时大颗粒净化效果明显；基体脉冲负偏压由20 V 升高到180 V,膜层平均腐蚀速率先降低后升高,140 V 时膜层耐腐蚀性能最佳.
Copper films were deposited by pulsed bias arc ion plating technique at different levels of process pa-rameters,such as arc current or negative substrate bias.The influences of arc current and negative substrate bi-as on microstructure,corrosion resistance performance,and cohesive performance of the copper films were re-spectively investigated by metallographic microscope,corrosion weight loss test,and bidirectional bend method. The result shows that with the arc current increasing from 40 to 80 A,the grain content on the film surface in-creases obviously,and the large grain size grows from 13.71 to 1 9.36 μm,meanwhile,the average corrosion rate of copper film decreases.The cohesive performance of copper films increases before decreasing with the in-crease of arc current,and reaches the top at 60 A.With the negative substrate bias increasing,both the grain content and the grain size decrease,while the cohesive performance of copper films increases.The effect of grain purging become considerably obvious when the negative substrate bias reach 200 V.When the negative substrate bias was increased from 20 to 180 V,the average corrosion rate of copper film decreases first then increases and reaches the best at 140 V.
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