利用霍尔离子源轰击 Si 基片获得了不同表面粗糙度的基片，然后利用磁控溅射方法制备了一系列Ta(5 nm)/Ni 80Fe 20(12 nm)/Ta(2 nm)薄膜样品，重点研究了基片表面粗糙度对薄膜结构和各向异性磁阻效应的影响。采用 AFM测量基片的表面粗糙度，采用四探针法测量薄膜的各向异性磁阻效应。研究结果表明，随着基片表面粗糙度的增加，坡莫合金的AMR值显著降低，且ΔH 显著增加。
A series of Si substrates with different surface roughness were prepared by using Hall ion source to bombard the Si substracte.A series of Ta(5 nm)/Ni 80Fe 20(12 nm)/Ta(2 nm)Ni 80Fe 20 magnetic thin films were prepared by magnetron sputtering method.Focus on the substrate surface roughness on the film structure and the anisotropic magnetoresistance effect.Film’s AMR effect were measured using four probe method,sub-strate surface roughness were measured by AFM.The results showed that with the increase in substrate surface roughness,AMR value permalloy significantly reduced,and increase theΔH .
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