采用原子层沉积技术与改进的Al掺杂模式在石英玻璃基体上低温制备AZO 薄膜,利用椭圆偏振仪、原子力显微镜、X 射线衍射仪、X 射线光电子能谱仪、Hall效应测试仪系统地对样品的生长速率、表面形貌、晶体结构、薄膜成分与电学性能进行了表征和分析.结果表明,采用原子层沉积在150℃下制备 AZO薄膜,其为六方纤锌矿结构,Al 掺杂对 ZnO 的(002)有明显的抑制作用,Al 在基体中弥散分布,其部分替换ZnO 晶格中的Zn,以Al—O 的形式存在于晶体中,晶体中存在大量的氧空位,最佳铝锌循环比为1∶19,此条件下AZO 薄膜电阻率为4．61×10－4Ω·cm.
Al-doped zinc oxide (AZO)films were prepared on quartz glass substrates by atomic layer deposition at 150 ℃ with improved Al-doped model.The growth rate was illustrated by spectroscopic ellipsometer.And surface morphology,crystal structure,films composition and electric properties were characterized by atomic force microscopy,X-ray diffraction,X-ray photoelectron spectroscopy and Hall measurement,respectively.The results showed that all of AZO films with hexagonal wurtzite structure were continuous and homogeneous on the substrate surface.The intensity of ZnO (002)crystal plane diffraction peak reduced with increasing Al atom doping content.Al was substituted for Zn in lattice position uniformly distributes and disperses in ZnO crystal structure by the mode of Al-O coalition,the O vacancies exist in the crystal.The lowest resistivity of 4.61 × 10-4 Ω·cm were obtained in AZO films when Al and Zn circulating ratio was 1∶19.
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