采用芘粉(C16H10)作为掺杂物,利用化学气相沉积法,制备了不同掺杂量的MgB2超导薄膜.通过X射线衍射仪、扫描电镜和综合物性测量系统对样品的晶体结构、表面形貌和超导电性进行了系统分析.结果显示,随着C16H10掺杂量的增加,晶格常数a逐渐变小,MgB2的晶粒逐渐细化.所有的掺杂样品都表现出比纯净样品更好的载流能力.当C16H10掺杂量达到0.2g时,MgB2薄膜的临界电流密度(Jc)和不可逆场表现出最佳的性能.掺杂0.2g的样品在5K,3T的Jc为1.12×104 A/cm2,高于纯净样品Jc一个数量级,说明了掺杂样品的磁通钉扎能力得到了显著的提高.
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