用射频磁控溅射技术改变工作压强(0.1～9 Pa)在玻璃衬底上制备B掺杂ZnO薄膜,用X射线衍射仪、紫外-可见分光光度计、四探针测试仪及粗糙度测试仪分别对薄膜进行微结构及其光电性能表征.结果发现,所有薄膜样品在420～900 nm区间内的平均透光率＞91％;ZnO:B晶粒尺寸随工作压强增大有先增大后减小,而电阻率先减小后增大的趋势.工作压强为0.5 Pa时电阻率达到最低1.53×10-3Ω·cm,所有薄膜样品禁带宽度相对于本征ZnO出现蓝移现象.
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