采用射频磁控溅射方法分别在石英玻璃和TCO玻璃上制备了不同厚度的CdS薄膜,研究了CdS薄膜厚度对薄膜结构和光学性质的影响.在不同厚度的CdS/TCO衬底上,进一步制备成CdTe薄膜太阳电池.结果表明,CdS薄膜厚度的增加有利于薄膜的生长与结晶;110 nm的薄膜具有禁带宽度为2.41 eV的最大值;测试电池性能,得到CdS厚度为110 nm的电池具有11.42％的最高转换效率.
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