金属电阻率Cu/Cu2O半导体弥散复合薄膜的制备及其偏压效应

功能材料, 2016, 47(3): 3205-3209. doi: 10.3969/j.issn.1001-9731.2016.03.038

金属电阻率Cu/Cu2O半导体弥散复合薄膜的制备及其偏压效应

刘阳 ^1, , 马骥 ^2, , 唐斌 ^3, , 蒋美萍 ^4, , 苏江滨 ^5, , 周磊 ^6,

1.常州大学数理学院,江苏常州,213164

2.常州大学数理学院,江苏常州,213164

3.常州大学数理学院,江苏常州,213164

4.常州大学数理学院,江苏常州,213164

5.常州大学数理学院,江苏常州213164;厦门大学物理系,福建厦门361005

6.常州大学数理学院,江苏常州,213164

基金项目: 江苏省自然科学基金资助项目(BK20141169) 江苏省高等学校大学生实践创新训练计划资助项目(201410292032Y) 常州大学学生课外科技创新基金暨“挑战杯·卓越”计划资助项目(2014-07-A-21)

关键词： Cu/Cu20 , 弥散复合薄膜 , 磁控溅射 , 衬底偏压 , 电阻率 , 禁带宽度

Fabrication of semiconducting Cu/Cu2O dispersive composite thin films with metallic resistivity and the bias voltage effect

Keywords： Cu/Cu2O , dispersive composite thin film , magnetron sputtering , substrate bias voltage , resistivity , bandgap

采用平衡直流磁控溅射技术,通过改变衬底偏压在玻璃衬底上制备了Cu/Cu2O弥散复合薄膜,并利用扫描电子显微镜、X射线衍射仪、四探针测试仪和紫外-可见分光光度计等进行表征与分析.研究发现,Cu/Cu2O弥散复合薄膜表现出金属和半导体双特性,其电阻率范围为(5.23～9.98)×10-5 Ω·cm,禁带宽度范围为2.23～2.47 eV.同时,研究还发现衬底偏压对Cu/Cu2O弥散复合薄膜的形貌、结构、电学和光学性能都产生了较大的影响,特别是当衬底偏压为-100 V时薄膜样品的表面最为致密,结晶程度最好,电阻率最低,禁带宽度最窄.进一步地,对平衡磁控溅射过程的偏压效应进行了分析,并提出了两种区别于传统轰击和再溅射作用的新机制.

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