采用磁控溅射法制备了Ge15 Ga10 Te75薄膜,研究溅射工艺对薄膜结构与性能的影响,并分析了在不同热处理温度(200~280℃)退火后薄膜光学特性的变化。通过扫描电子显微镜、X射线衍射仪、显微拉曼光谱仪、分光光度计等测试手段对热处理前后薄膜样品的微观结构和光学特性进行了表征,结果表明,3次不同工艺下制备的沉积态薄膜组分与靶材偏差较小,且均是非晶态。沉积态薄膜的短波截止波长均在1μm 左右；当退火温度(Ta)大于薄膜的玻璃转化温度(Tg)时,薄膜的光学带隙(Egopt)随着退火温度的增加而逐渐减小,沉积态薄膜的光学带隙分别为1．05,1．06和1．07 eV,而在280℃退火后薄膜光学带隙分别降至0．38,0．42和0．45 eV,以上3次实验结果表明,不同工艺下制备的Ge15 Ga10 Te75薄膜组分均匀可控,热学和光学参数较一致。
The amorphous Ge15 Ga10 Te75 thin film was prepared by magnetron sputtering deposition technique. Effect of heat treatment on the microstructure and optical properties of Ge15 Ga10 Te75 thin films has been investi-gated.The films annealed in the range of 200-280 ℃ were characterized by X-ray diffraction,Raman spectrosco-py and spectrophotometer.The results indicate that the as-deposited films prepared by three different processes were close to the target composition.These as-deposited films were amorphous,possessing the cut-off wave-length about 1μm.With the annealing temperature increasing,the optical band gap decreased.The optical band gap of the as-deposited thin films were 1.05,1.06 and 1.07 eV,which finally decreased to 0.38,0.42 and 0.45 eV after annealing at 280 ℃.Experimental results show that Ge15 Ga10 Te75 thin films,prepared under three different processes,exhibiting a uniformly controllable composition,approximately thermal and optical parame-ters.
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