以石墨片为衬底，利用磁控溅射技术生长多晶硅籽晶层，退火处理后用 CVD 制备多晶硅厚膜。XRD测试结果表明，在籽晶层上外延多晶硅厚膜具有高度的(220)取向，这说明外延层的择优取向延续了籽晶层的取向。SEM测试结果表明，石墨片上多晶硅外延层生长良好，说明石墨片作为廉价衬底之一，有望投入工业化生产，以降低太阳能电池的制作成本。
Polycrystalline silicon seed layers are grown on thin plates of graphite by using magnetron sputtering technology,and rapid thermal annealing.Polycrystalline silicon thick films are deposited via CVD on the silicon seed layers.XRD measurements show that the silicon thick films deposited on seed layers have highly (220) preferred orientation,which indicates that the silicon thick films have the same preferred orientation with the seed layers.SEM measurements reveal that the silicon thick films grew well,which demonstrates that thin plates of graphite,as one of the cheap substrates,are expected to be put into industrial production,in order to reduce the preparation cost of solar cells.
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