通过腐蚀法制备SiC量子点荧光标记材料，以硝酸和氢氟酸为腐蚀剂，通过超声空化破碎分散及超重力场层析剪裁，得到SiC量子点水相溶液，研究了制备工艺参数对光学特性的影响，结果表明，降酸清洗次数、超声时长对量子点光致发光峰值(荧光强度)的影响最为显著，而腐蚀剂成分及配比、超重力系数在一定程度上影响了其光致发光强度及发射光波长，同时腐蚀剂成分中氢氟酸含量的增加使得光致发光峰值位置发生红移，而超声时长及超重力系数的增加使得SiC量子点光致发光峰值位置发生蓝移。并对 SiC颗粒腐蚀过程相关机制也进行了探讨。
The aqueous silicon carbide quantum dots (SiC-QDs)were prepared by chemical corrosion method. The fabrication process was listed as following:take the nitric and hydrofluoric acid as the mixture chemical etchants;through the ultrasonic cavitation dispersion and tomographic clipping in ultra-gravity field,the aque-ous phase solution of silicon carbide quantum dots was obtained.The effect of fabrication parameters on spectral characteristics of SiC-QDs was investigated.The results indicated that the most remarkable influencing factors on the photoluminescence(PL)intensity (fluorescence intensity)were deacidification times with ultrapure water and the duration of ultrasonic treatment.While the components and its relative concentration of the chemical etchants,the ultra-gravity coefficient can also influence the photoluminescence intensity and emission wave-length of SiC-QDs.Meanwhile,the red shift of PL peak will occur with the increase of hydrofluoric acid’s con-centration,while the blue shift appears following the increase of ultrasonic cavitation’s time length and ultra-gravity coefficient.Moreover,the corrosive process and relevant mechanism of SiC-QDs were also discussed.
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