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AlO 薄膜作为高效太阳能电池中P层钝化薄膜引起了光伏龙头企业的关注。本文利用自主研发的线性微波等离子增强化学气相沉积系统(LMW-MOCVD)在单晶硅基体上用不同N2 O 和 TMA特气比例制备氧化铝膜层样品,并通过SEM、SE800椭偏仪对薄膜的成分、表面形貌、厚度、沉积速度、折射率测试分析。实验结果表明,随着N2 O 比例增大,薄膜中O/Al原子比例有上升趋势;膜层沉积速度显著降低;膜层折射率开始趋于稳定而后迅速降低。所以,工艺气体比例对LMW-MOCVD沉积氧化铝膜的性能有明显影响。

AlO,as Surface passivation film to P type silicon in high efficiency solar cells,caused concern by lead-ing company.AlO thin film were deposited onto monocrystalline silicon using self-developed LMW-PECVD technology with difference process gas proportion between N2 O and TMA.Composition and surface morphology of the films were investigated by SEM.SE800 spectroscopic ellipsometer was employed to measure thickness and refractivity of the films.The result shows that,with the increasing of N2 O ratio,element ratio of O/Al in film is on the rise;deposition rate of AlO film remarkably decrease;refractivity of the film began to level off and then decreased rapidly.So,Process gas proportion plays an important role in AlO films.

参考文献

[1] J. Schmidt;A. Merkle;R. Brendel.Surface Passivation of High-efficiency Silicon Solar Cells by Atomic-layer-deposited Al_2O_3[J].Progress in photovoltaics,20086(6):461-466.
[2] 陈杰;李俊;赵金茹;李幸和;许生根.ALD氧化铝薄膜介电性能及其在硅电容器的应用[J].电子与封装,2013(9):31-34.
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