采用射频磁控溅射方法在Si(100)衬底沉积 Ni-Mn-In 磁性形状记忆合金薄膜.系统研究了退火温度对Ni51．33 Mn33．23 In15．43薄膜显微组织结构和磁性能的影响.研究表明,退火温度为873 K时薄膜已完全结晶,随退火温度增加,薄膜表层颗粒细化.退火后薄膜的X射线衍射图表明,Ni51．33 Mn33．23 In15．43薄膜均由立方 L21奥氏体母相和14M调制马氏体相组成.Ni51．33 Mn33．23 In15．43薄膜母相晶格常数、马氏体相的晶胞体积和薄膜平均晶粒尺寸均随退火温度增加而增大.Ni51．33Mn33．23In15．43磁性记忆合金薄膜室温初始磁化曲线表明,在1．8 T 磁场下,薄膜均未达到磁饱和.随退火温度增加,薄膜的初始磁化强度先增加后减小,在退火温度为973 K 时达到最大.室温磁滞回线结果表明,Ni51．33 Mn33．23 In15．43薄膜的矫顽力较小,呈现出典型的软磁性.
Polycrystalline Ni51.33 Mn33.23 In15.43 thin film was deposited by the R.F.magnetron sputtering on well-cleaned substrate of Si(100).The influence of annealing temperature on the microstructure and magnetic prop-erties of deposited Ni51.33 Mn33.23 In15.43 thin film are investigated.The increase of annealing temperature decreases the particle size of the surface of Ni51.33 Mn33.23 In15.43 thin films.The analysis of annealed thin films show that crystallization was fully completed when annealed at 873 K and all the annealed thin films are consisted of parent phase and 14M modulated martensite phase.And the lattice parameter and cell volume increase with annealing temperature.The initial magnetization curve manifests that the Ni51.33 Mn33.23 In15.43 thin films was ferrimag-netism.With the increase of annealing temperature,the initial magnetization enhances firstly and then decrea-ses,and reaches the maximum value when annealing temperature is 973 K.The hysteresis loop indicates that Ni51.33 Mn33.23 In15.43 thin films present the typical soft magnetic.
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