采用一步溶液法制备的CH3 NH3 PbI3薄膜,用扫描电子显微镜、原子力显微镜、X 射线衍射仪对 CH3 NH3 PbI3钙钛矿薄膜的表面形貌和晶体结构进行表征.通过对薄膜的电流-电压(I-V)曲线的测试结果计算得到在退火温度为60,80,100,120和140℃制备的CH3NH3PbI3薄膜的电导率分别为0．0069,0．0089,0．0178,0．0104和0．0013 mS/cm.研究结果表明,合适的退火温度有助于薄膜结晶度的提高,晶粒尺寸的增大且尺寸分布均匀,从而有效减少晶界缺陷和晶界散射,薄膜电导率大幅度提高.但是,过高的退火温度(＞120℃)会导致碘离子 VI空位缺陷的数量急增,甚至导致CH3 NH3 PbI3的分解,使得薄膜内部的缺陷浓度提高.由于缺陷散射增强,载流子迁移率降低,薄膜电导率减小.
CH3 NH3 PbI3 thin films are prepared by one-step solution deposition method and annealed at different temperatures (60,80,100,120,140 ℃).Effect of annealing temperature on the surface morphology and crys-talline structure of the prepared thin films are investigated by Scanning Electron Microscopy,Atomic Force Mi-croscope and X-Ray Diffraction,respectively.From their current-voltage (I-V)curves,the conductivity of CH3 NH3PbI3 thin film annealed at 60,80,100,120,and 140 ℃ are calculated as 0.0069,0.0089,0.0178,0.0104 and 0.0013 mS/cm,respectively.It turns out that under suitable annealing temperature,the degree of crystal-linity of the films was increased,and grain size distribution becomes more uniform.Therefore,the defects be-tween adj acent grains and scattering caused by grain boundary were effectively decreased,leading to a great in-crease of conductivity.However,under high annealing temperature (>120 ℃),large numbers of VI vacancies were generated and fractions of CH3 NH3 PbI3 decompose,which eventually result in the decrease of carrier mobility.
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