采用圆形传输线模型研究了金(Au)电极与碲锰镉(CdMnTe)晶体的欧姆接触特性,Au电极采用AuCl3化学镀金法制备,计算了其接触电阻率.实验探讨了表面处理和退火对Au/CdMnTe接触电阻率的影响.结果表明,CdMnTe晶体经过化学抛光和化学机械抛光后Au/CdMnTe的接触电阻率分别为544.5和89.0Ω?cm2.通过AFM与XPS分析了晶体表面的形貌与成分,发现表面粗糙度和富Te成分对CdMnTe薄层电阻和载流子传输长度有较大的影响,决定了接触电阻率的大小.在150℃空气气氛退火1 h后,经CP和CMP表面处理的样品,Au/CdMnTe接触电阻率均减小,分别为313.6和30.2Ω?cm2.退火促进了Au向CdMnTe晶体的扩散,使接触电阻率进一步降低,欧姆接触性能提高.
The ohmic characteristics of Au/CdMnTe contact were investigated by circular transmission line mod-el (CTLM).The Au contacts on CdMnTe wafers were deposited with the electroless AuCl3 technique.The in-fluence of surface polishing and annealing on the contact resistivity of Au/CdMnTe were analyzed.The contact resistivity of Au/CdMnTe on the chemical polished and chemical mechanical polished surfaces were 544.5 and 89.0 Ω?cm2 ,respectively.The surface morphology and composition of CdMnTe wafers were characterized by AFM and XPS,which revealed that the surface roughness and Te-rich state had great effect on the sheet resist-ance and the carrier transmission length,thus determined the contact resistivity of Au/CdMnTe.After annea-ling at 150e for 1 h,the contact resistivity of the Au/CdMnTe contact treated by CP and CMP both decreased to 313.6 and 30.2Ω?cm2 .The annealing procedure enhanced the diffusion of Au into the CdMnTe crystal,which further decreased the contact resistivity,and the quality of the ohmic contact was improved.
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