研究射频磁控溅射法制备ZnO 薄膜,采用X射线衍射仪(XRD)和场发射扫描电子显微镜(SEM)研究溅射功率、溅射时间和退火温度对薄膜微结构特性的影响,并分析ZnO 薄膜阻变特性.实验结果表明,沉积态薄膜择优取向为?002?晶向,随溅射功率和退火温度增加,择优取向显著增强,溅射功率120 W时薄膜生长速率可达4．8 nm/min,薄膜厚度92 nm的ZnO 薄膜具有阻变特性且开关比可达104.
Preparation of ZnO thin films based on RF magnetron sputtering,by using X-ray diffraction (XRD), field emission scanning electron microscopy (SEM)to analyze ZnO thin films which were manufactured under various sputtering power,time and annealed at various temperature.The results show that the preferred orien-tation of deposited ZnO thin films was (002)plane,and enhanced with increased sputtering power and annea-ling temperature.We analyzed I-V characteristics of the ZnO thin films.The results show that the ZnO thin films which its thickness is 92 nm has resistive switching characteristic,and the on-off ratio was upto 104 .
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