采用一步银铜双原子金属辅助化学腐蚀(MACE)法,于室温下在多晶硅表面制备纳米陷光结构,研究了腐蚀时间及银铜摩尔比对多晶硅表面反射率和形貌的影响.用分光光度计测量了多晶硅表面的反射率,用扫描电镜观察了表面形貌.发现银铜双原子MACE法所形成的结构比银单原子或铜单原子MACE 法所形成的结构更加平整且具有更低的表面反射率室温下经过银铜两种金属原子协同催化腐蚀后,在银铜原子摩尔比低于1/10时多晶硅表面形成了纳米多孔状与槽状结构共存的复合结构,在银铜原子摩尔比高于1/5时多晶硅表面形成密集的纳米线结构.研究结果表明,孔状与槽状的复合结构具有良好的陷光效果,当银铜原子摩尔比为1/10,腐蚀时间为180 s时,多晶硅的反射率达到最低,仅为6．23％.
A novel one-step metal assisted chemical etching (MACE)method with Ag and Cu dual elements as catalysts at room temperature was introduced to prepare anti-reflection structures on multicrystalline silicon (mc-Si).The effects of etching time and molar ratio of Ag/Cu on the reflectance and surface morphology of mc-Si wafer were systematically studied.The reflectance was analyzed by spectrophotometer and the morphologies were observed by scanning electron microscopy.It was found that mc-Si surface by Ag/Cu-assisted etching is smoother than that by Ag or Cu-assisted etching and the reflectance of the former is lower.A complex structure with pores and grooves was obtained when Ag/Cu molar ratio is smaller than 1/10 and dense nanowire structure was obtained when Ag/Cu molar ratio is larger than 1/5 .The results showed that the complex structure with pores and grooves possessed a good light trapping effect.A minimum surface reflectance of 6.23% in the wave-length range from 400 to 900 nm was obtained when Ag/Cu molar ratio was 1/10 and etching time was 180 s.
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