低活化铁素体/马氏体钢是第四代裂变堆和未来聚变堆的候选结构材料,其主要成分为Fe-8Cr合金.为了研究其辐照行为,对Fe-Cr 二元合金辐照后产生的位错环进行了分析.在室温下对纯Fe和Fe-8Cr注入氦离子,随后在超高压透射电子显微镜中时效(773 K/1 h),并在773 K进行电子束辐照并进行原位观察.结果发现,室温注氦后两种样品中产生的缺陷在773 K聚集成间隙型位错环,这些位错环在随后的电子束辐照下不断长大.纯铁和Fe-8Cr 中的位错环在电子束辐照下的长大速率近乎相同,但Fe-8Cr中位错环的密度比纯铁高一个数量级,而其尺寸比纯铁中的小的多.分析表明,辐照过程中Fe-8Cr中Cr团簇的富集阻止了位错环的移动.
Dislocation loops induced by irradiation for Fe-8Cr alloy were analysed to study the irradiation behavior.Pure Fe and Fe-8Cr alloy were implanted by helium at room temperature, respectively.Then they were aged at 773 K for 1 h at High Voltage Electron Microscope (HVEM).Finally, they were irradiated electron beam at 773 K and in-situ observed by HVEM.The results show that, the defects induced by helium implatation at room temperature were aggregated to interstitial loops at 773 K, which were grown up followed by electron beam irradiation at 773 K.The growth rates of dislocation loops in both samples are almost the same.However, the density of dislocation loops in Fe-8Cr alloy is an order of magnitude higher than that in pure iron, meanwhile, the size of dislocation loops in Fe-8Cr alloy is much smaller than that in pure iron.The analysis indicates that the enrichment of Cr-cluster prevents the moving dislocation loops.
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