自支撑硅氧碳纳米镶嵌复合薄膜具有细小等轴β-SiC纳米晶弥散分布在非晶态相SiOxCy和游离碳基体的复合结构.利用电子顺磁共振谱(EPR)仪对900~1 200 ℃终烧薄膜复合结构中的氧空位形成进行分析;采用丝网印刷法在薄膜表面获得两条平行高温银浆电路层,并以其为散热基板进行LED器件板上芯片封装(COB).通过扫描电镜(SEM)与光学显微镜对薄膜微观形貌及封装结构进行观察,并通过LED热光参数测试仪对其结温进行探究.结果表明,终烧温度升高,薄膜氧空位浓度增大,g因子接近自由电子值2.0023.高温银浆导电层均匀致密保证良好电导效果.1 200 ℃终烧薄膜作为散热基板具有较好热传导与绝缘特性,其封装LED结温约为33.7 ℃,低于120 ℃限制,有望规模应用于大功率LED器件领域.
Main phases of freestanding β-SiC/SiOxCy/Cfree nanocomposite films are SiOxCy, and β-SiC nano-crystals are embedded within amorphous SiOxCy and free carbon clusters.Formation of oxygen vacancy in the samples sintered at 900-1 200 ℃ was investigated by electron paramagnetic resonance (EPR) spectroscopy.The films can be silk-screened by high temperature silver paste electrode with good conductivity and used as heat dissipation substrate for high-power LED devices via the technology of Chip On Board (COB).Morphology and package structure analysis were characterized by scanning electron microscope (SEM) and optical microscope.Junction temperature of LED devices was measured by thermal transient tester.The results show that the proportion of oxygen vacancy increases with increasing pyrolysis temperatures, and resonance lines with g-factor close to the free-electron value (2.0023) is attributed to an unpaired electron trapped on an oxygen vacancy site.Junction temperature of LED devices based on the sample substrate sintered at 1 200 ℃ with high heat transfer capability and good insulation is 33.7 ℃ far below the limit of 120 ℃.The obtained results are expected to have applications in high-power LED devices.
参考文献
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%