采用化学气相沉积法(Chemical Vapor Deposition,CVD)制备了CVD-SiC陶瓷基片并在1500℃空气中进行预氧化处理,对比研究了预氧化前后CVD-SiC分别在1100、1300和1500℃静态水氧耦合环境下的氧化行为.采用扫描电子显微镜和X-射线衍射分析不同叠加氧化温度条件下表面形貌和物相演变规律.结果表明,预氧化后氧化(叠加氧化)和预氧化前氧化(水氧氧化)具有相似的氧化机理,均呈现出典型的抛物线型模式,两者的活化能分别为116kJ/mol和98.9 kJ/mol.
A SiC coating was deposited on SiC substrate by chemical vapor deposition (CVD) ,which was sub-sequently oxidized in air at 1500℃. Afterwards, superimposed oxidation tests were conducted at 1100, 1300 and 1500℃ in wet-oxygen atmosphere, respectively. The oxidation mechanisms were discussed based on the weight change of the specimen. The specimen morphology and phase evolutions were analyzed by the scanning electron mi-croscopy and X-ray diffraction, respectively. The resuhs showed that the superimposed oxidation and pre-oxidation share a similar parabolic mechanism,while their activation energies are 116 kJ/mol and 98. 9kJ/mol, respectively.
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