热丝CVD法金刚石膜生长中基体温度对金刚石薄膜的质量有很大的影响,而基体与灯丝的距离决定着基体沉积温度的高低.本实验采用单一变量法,在其它工艺参数不变的情况下,研究不同基体与灯丝距离对CVD金刚石涂层的质量的影响.采用扫描电镜、Raman光谱、洛氏硬度计对试样的表面形貌、成分和涂层与基体的结合力进行测定.结果表明,当采用两步法基体预处理,在碳源体积浓度为2％、沉积气压为3kPa、反应功率为4 kW时,得到最优金刚石涂层质量的热丝与基体的距离为5 mm.
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