本文利用5 kW微波等离子体装置,在直径22 mm的石英上沉积金刚石薄膜.实验研究了衬底在不同位置对沉积金刚石薄膜的质量产生的影响.实验中将2块石英衬底编号为A和B,样品A被放在偏离钼基片台中心5 mm的位置,使石英的中间区域偏离等离子体球,而边缘区域处于等离子体球的下方.通过SEM和拉曼光谱表征所沉积的金刚石膜,对比样品A的中间和边缘区域发现中间的区域金刚石膜的质量差且不均匀,边缘区域则长出取向一致的(100)面金刚石.通过分析认为,较高的温度、大的等离子体密、合适的碳源浓度度等条件有利于(100)面金刚石薄膜的沉积.随后改进工艺,将样品B放在基片台中心使其处于等离子体的正下方,并调整生长温度和甲烷浓度,成功的获得了高质量均匀的(100)面金刚石薄膜.
参考文献
| [1] | 吕继磊,满卫东,陈朋,朱金凤,吴飞飞.硬质合金CVD金刚石涂层最新进展[J].硬质合金,2011(05):321-331. |
| [2] | Klages C P .Chemical vapor deposition of diamond[J].Applied Physics A(Materials Science and Processing),1993,56(6):513-526. |
| [3] | 孙祁,汪建华,翁俊,罗曼.MPCVD快速制备（100）面金刚石薄膜[J].硬质合金,2013(01):8-13,18. |
| [4] | Huang T C;Lia G;Parmigiani F et al.Effect of ion bombardment during deposition on the X-ray microstructure of thin siliver films[J].Journal of Vacuum Science and Technology,1983,6(A3):2161-2162. |
| [5] | Chang Gu;Zengsu J;Xianyi Lu et al.The deposition of diamond film with high thermal conductivity[J].THIN SOLID FILMS,1998,311:124-125. |
| [6] | Wang Wanlu;Liao Kejun;Kong Chunyang et al.Influence of microstructure and morphology on electronic properties of hot fi-1 ament chemical vapor deposition[J].J Functional Metals and Devices,2001,3(7):318-322. |
| [7] | Jany C;Foulon F;Bergonzo P et al.Influence of CVD diamond film textures on the electrical response of radiation detectors[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators Spectrometers Detectors and Associated Equipment,1996,380(1):107-111. |
| [8] | Wang L;Yiben X;Ju J et al.Electrical properties of[001]textured and non-textured CVD diamond films[J].Journal of Functional Materials,2000,31(6):608-609. |
| [9] | Bum Joo Lee;Byung Tae Ahn;Jae Kab Lee .A study on the conduction path in undoped polycrystalline diamond films[J].Diamond and Related Materials,2001(12):2174-2177. |
| [10] | Kobayashi T .Electrical resistivity of diamond films grown by thermal plasma CVD[J].Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi (Journal of the Ceramic Society of Japan)(Japan),1991,99(1156):1201-1206. |
| [11] | 满卫东,翁俊,吴宇琼,吕继磊,董维,汪建华.MPCVD法在基片边缘生长大颗粒金刚石的研究[J].人工晶体学报,2011(01):53-59. |
| [12] | D. Das;R. N. Singh .A review of nucleation, growth and low temperature synthesis of diamond thin films[J].International Materials Reviews,2007(1):29-64. |
| [13] | Tsan-Heui Chein;Jin Wei;Yonhua Tzeng .Synthesis of diamond in high power-density microwave methane/hydrogen/oxygen plasmas at elevated substrate temperatures[J].Diamond and Related Materials,1999(8-9):1686-1696. |
| [14] | Xianglin Li;James Perkins;Ramon Collazo .Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD[J].Diamond and Related Materials,2006(11/12):1784-1788. |
| [15] | Q. Yang;W. Chen;C. Xiao .Low temperature synthesis of diamond thin films through graphite etching In a microwave hydrogen plasma[J].Carbon: An International Journal Sponsored by the American Carbon Society,2005(12):2635-2638. |
| [16] | W.M. Silva;N.G. Ferreira;J. Travello .Dependence of diamond nucleation and growth through graphite etching at different temperatures[J].Diamond and Related Materials,2007(9):1705-1710. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%