用非自耗电弧炉熔炼了Gd5+xSi2Ge2系列样品.用X射线粉末衍射(XRD)和Rietveld方法研究了Gd5+xSi2Ge2系列样品的晶体结构.用自制的仪器测量了样品的居里温度,用振动样品磁强计研究了样品的磁卡效应.对样品的晶体结构分析结果表明:Gd的含量x的变化对Gd5Si2Ge2化合物的晶体结构有较大的影响,当x>0时,样品中含有Gd5(Si,Ge)4和Gd5(Si,Ge)3两个相,并且随着x的增加Gd5(Si,Ge)4相会减少,Gd5(Si,Ge)3相会增加;当x<0时,样品会形成Gd5(Si,Ge)4和Gd(Si,Ge)两相,并且随着x的减少Gd5(Si,Ge)4相会减少,Gd(Si,Ge)相会增多.对样品的磁性能分析结果表明:Gd的含量x>0和x<0时都会降低样品的磁卡效应,样品的居里温度会随着x的增加而增加.
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