利用真空蒸发的方法制备ZnTe多晶薄膜,并采用双源法对薄膜进行了稀土元素Dy的掺杂.用XRD、紫外可见分光光度仪对薄膜的性质进行了表征.结果表明,当原子配比Zn:Te=1:0.7,热处理温度T=500℃时,可制备较理想的ZnTe多晶薄膜.稀土Dy掺杂并未改变样品的物相结构,但使薄膜光吸收增大而光学带隙减小.
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