用脉冲激光溅射(PLD)法在LaAlO3(100)单晶衬底上制备了掺4.0 wt%Ag的超巨磁电阻材料La0.67Ca0.33MnO3薄膜.在氧气氛中经高温处理后薄膜显示了近室温的金属-绝缘体相变点(TMI≈300 K),与通常提高TMI的结果相比较,此工艺较好地保持了材料相变点区间的陡度,且电阻温度系数(TCR)在此区内仍达到8%.这为制造近室温磁敏感元件、自旋电子学器件、辐射热探测器等提供了重要材料.
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