在ITO导电玻璃基体上应用电沉积方法制备了银纳米晶体,通过调节沉积电位,制备了形貌和尺寸可控的样品.用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外可见光谱仪(UV -Vis)分别对样品的结构、微观形貌以及光学性质进行了表征.结果表明:沉积电位是在一定范围内决定银纳米晶体的生长速度和最终生长形态的直接因素,在沉积电位E= 0.2～0 V(SCE)之间观察到了沿(111)面择优生长引起的多面体晶体-枝晶转化；通过UV - Vis光谱发现,当E= -0.2V时,在350 nm处有一个区别于其它电位的明显的吸收峰.
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