金属硅化物因其薄膜电阻率低,熔点高,化学性质稳定,在微电子领域具有广阔的使用前景.本文系统地阐述了硅化钛的性质、制备方法(包括自对准硅化物技术及CVD技术)及其应用.对硅化钛在集成电路中的应用进行了重点介绍.
参考文献
[1] | ILDEREM V;REIF R .Optimized deposition parameters for low pressure chemical vapor deposited titanium silicide[J].Journal of the Electrochemical Society,1988,135(10):2590-2596. |
[2] | Gambino JP.;Colgan EG. .Silicides and ohmic contacts [Review][J].Materials Chemistry and Physics,1998(2):99-146. |
[3] | OZCAN A S .Evolution of texture in titanium silicide thin films[D].Boston:Boston University,2003. |
[4] | Shenai K. .Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications[J].IEEE Transactions on Electron Devices,1990(10):2207-2221. |
[5] | Goldfarb I;Grossman S;Cohen-Taguri G .Evolution of epitaxial titanium silicide nanocrystals as a function of growth method and annealing treatments[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(15):5355-5360. |
[6] | D. Vojtech;T. Kubatik;H. Cizova .Application of Silicon for a Protection of Titanium against High-Temperature Oxidation[J].Materials Science Forum,2005(0):243-246. |
[7] | LA VIA F;ROCCAFORTE F;MAKHTARI A et al.Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide[J].Microelectronic Engineering,2002,60(1-2):269-282. |
[8] | Osamu NAKATSUKA;Kazuya OKUBO;Yoshinori TSUCHIYA;Akira SAKAI;Shigeaki ZAIMA;Yukio YASUDA .Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems[J].Japanese journal of applied physics,2005(5a):2945-2947. |
[9] | M.F. Bain;N. Deo;B.M. Armstrong;H.S. Gamble .Effect of deposition temperature on the formation of CoSi_2 through the rapid thermal annealing of CVD cobalt[J].Microelectronic engineering,2004(1/4):336-342. |
[10] | Prokop J.;Veprek S.;Zybill CE. .nm-Co2Si, CoSi and CoSi2 silicide films from the single source precursor CoSiCl3(CO)(4) in the presence of SiH4[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1):39-45. |
[11] | F. Weitzer;P. Rogl;H. Noel .The ternary system: silicon-titanium-uranium[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2003(1/2):155-159. |
[12] | Schultes G;Schmitt M;Goettel D;Freitag-Weber O .Strain sensitivity of TiB2, TiSi2, TaSi2 and WSi2 thin films as possible candidates for high temperature strain gauges[J].Sensors and Actuators, A. Physical,2006(2):287-291. |
[13] | Ozcan AS;Ludwig KF;Lavoie C;Basu SN;Coia C;Cabral C;Rodbell KP;Harper JME .Evolution of microstructure in Ti-Ta bilayer thin films on polycrystalline-Si and Si(001)[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(1/2):238-249. |
[14] | LA VIA F;PRIVITERA S;MAMMOLITI F et al.Effects of a Ta interlayer on the titanium silicide reaction:C40 formation and scalability of the TiSi2 process[J].Microelectronic Engineering,2002,60(01):197-203. |
[15] | 郜剑英,江莞,王刚.高纯MoSi2粉体的高温自蔓延燃烧合成[J].稀有金属材料与工程,2005(z1):158-160. |
[16] | VARAHRAMYAN K;VERRET E J .A model for specific contact resistance applicable for titanium silicide-silicon contacts[J].Solid-State Electronics,1996,39(11):1601-1607. |
[17] | Osiceanu P .An XPS study on ion beam induced oxidation of titanium silicide[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(1):381-384. |
[18] | CHEN J;COLINGE J P .Study on titanium silicide process for thin-film SOI devices[J].Microelectronic Engineering,1997,33(1-4):189-194. |
[19] | HOLLAND A S;REEVES G K .New challenges to the modelling and electrical characterisation of ohmic contacts for ULSI devices[J].Microelectronics Reliability,2000,40(06):965-971. |
[20] | Sisodia V;Kabiraj D;Bolse W;Jain IP .Phase formation by ion beam mixing in the Ti/Si multilayer system[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(11):4016-4019. |
[21] | Yang TH;Chi KS;Chen LJ .Formation of Ti silicide nanocrystals in the amorphous interlayers in ultrahigh-vacuum-deposited Ti thin films on (001)Si[J].Journal of Applied Physics,2005(3):4302-1-4302-6-0. |
[22] | LUNDQVIST N;ABERG J;NYGREN S et al.Effects of substrate bias and temperature during titanium sputter-deposition on the phase formation in TiSi2[J].Microelectronic Engineering,2002,60(1-2):211-220. |
[23] | Lee SM.;Lee H.;Kulik J.;Rabalais JW.;Ada ET. .Growth of Ti and TiSi2 films on Si(111) by low energy Ti+ beam deposition[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,2000(1/3):159-170. |
[24] | Jeon H.;Nemanich RJ.;Yoon G. .DEPENDENCE OF THE C49-C54 TISI2 PHASE TRANSITION TEMPERATURE ON FILM THICKNESS AND SI SUBSTRATE ORIENTATION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):178-182. |
[25] | S.-L. Zhang;U. Smith .Self-aligned silicides for Ohmic contacts in complementary metal-oxide-semiconductor technology: TiSi_(2), CoSi_(2), and NiSi[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2004(4):1361-1370. |
[26] | Zhang Lin;Y. K. Lee .Effect of multi-cycle annealing on the C49-C54 phase transformation in TiSi_2 thin film[J].Materials science in semiconductor processing,2000(3):215-219. |
[27] | Matko I.;Chenevier B.;Chaix-Pluchery O.;Madar R.;La Via F. .TEM analysis of an additional metal-rich component at the C49-C54 transformation in Ti/Si thin films capped with TiN[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1/2):123-127. |
[28] | O. Chaix-Pluchery;B. Chenevier;I. Matko;J. P. Senateur;F. La Via .Investigations of transient phase formation in Ti/Si thin film reaction[J].Journal of Applied Physics,2004(1):361-368. |
[29] | GRIMALDI M G;LA VIA F;RAINERI V et al.Kinetics of the C49-C54 phase transition in TiSi2:New indications from sheet resistance,infrared spectroscopy and molecular dynamics simulations[J].Microelectronic Engineering,1997,37-38:441-448. |
[30] | ALESSANDRINO M S;GRIMALDI M G;LA VIA F .C49-C54 phase transition in nanometric titanium disilicide nanograins[J].Microelectronic Engineering,2002,64(01):189-196. |
[31] | HILLMAN J;FOSTER R;FAGUET J et al.Integrated CVD titanium and titanium nitride processes for sub-0.5-μm metallization[J].Solid State Technology,1995,38(07):147-152. |
[32] | C. L. Gan;K. L. Pey;W. K. Chim;S. Y. Siah .Effects of high current conduction in sub-micron Ti-silicided films[J].Solid-State Electronics,2000(10):1837-1845. |
[33] | Takashi Hashimoto;Haruyuki Inui;Katsushi Tanaka .Reduction of the C49 ->C54 phase transformation temperature in co-sputtered TiSi_2 thin films by ternary alloying[J].Intermetallics,2003(5):417-424. |
[34] | J. Ma;Y. Gu;L. Shi .Co-reduction route to nanocrystalline titanium silicide by using different metal reductants[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2004(1/2):250-253. |
[35] | John P. Campbell .Analysis of Sidewall Cleans Relating to Titanium Salicide Filaments[J].IEEE Transactions on Semiconductor Manufacturing,2004(4):603-611. |
[36] | ACHUTHARAMAN R;HEY P;REGOLINI J L .Selective CVD of titanium silicide for raised source/drains[J].Semiconductor International,1996,19(11):149-150,152. |
[37] | BERNARD C;MADAR R;PAULEAU Y .Chemical vapor deposition of refractory metal silicide for VLSI metallization[J].Solid State Technology,1989,32(02):79-84. |
[38] | 阙端麟;陈修治.硅材料科学与技术[M].杭州:浙江大学出版社,2002 |
[39] | DU J;DU P;XU M.Preparation and properties of titanium silicide coating glass by CVD[J].Journal of Non-Crystalline Solids,2007 |
[40] | DU J;DU P;XU M et al.Nucleation and growth of TiSi2 thin films deposited on glass by APCVD[J].Journal of Applied Physics,2007,101:033539. |
[41] | REGOLINI J L;BENSAHEL D;BOMCHIL G et al.Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reaction[J].Applied Surface Science,1989,38:408-415. |
[42] | LEE C Y .Selective formation of titanium silicide by chemical vapor deposition using titanium halides and silicon wafer as the precursors[J].Journal of Materials Synthesis and Processing,1998,6(01):55-59. |
[43] | Southwell RP.;Seebauer EG. .KINETICS OF TISI2 FORMATION AND SILICON CONSUMPTION DURING CHEMICAL VAPOR DEPOSITION[J].Journal of the Electrochemical Society,1997(6):2122-2137. |
[44] | Saito K.;Arita Y. .CAUSE OF ALIGNED-ORIENTATION GROWTH OF TITANIUM SILICIDE IN PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION[J].Journal of the Electrochemical Society,1996(11):3778-3784. |
[45] | Fouad OA.;Yamazato M.;Nagano M. .Investigation of RF power effect on the deposition and properties of PECVD TiSi2 thin film[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):130-136. |
[46] | Fouad OA.;Yamazato A.;Hiroshi A.;Era A.;Nagano A. .Formation of titanium silicide thin films on Si(100) substrate by RF plasma CVD[J].Surface & Coatings Technology,2003(0):632-635. |
[47] | REISSE G;GANSICKE F;FISCHER A et al.Laser direct writing of titanium silicide thin films[J].Applied Surface Science,1993,69(1-4):412-417. |
[48] | G. Verma;S. Talwar;J. C. Bravman .Differential thermal budget in laser processing: application to formation of titanium silicide[J].IEEE Electron Device Letters,2000(10):482-484. |
[49] | SZWAGIERCZAK D .Thick film compositions based on titanium silicides for surge resistors[J].Ceramics International,2004,30(05):757-764. |
[50] | Ling TGI.;Montelius L. .Metal silicides as a novel electrode material in electrochemical sensors[J].Sensors and Actuators, B. Chemical,2000(1/3):83-86. |
[51] | Tong X;Wolkow RA .Scanning tunneling microscopy characterization of low-profile crystalline TiSi2 microelectrodes on a Si(111) surface[J].Applied physics letters,2005(20):3101-1-3101-3-0. |
[52] | 杜军,杜丕一,韩高荣,翁文剑,汪建勋,郝鹏,黄燕飞.晶相形成对TiSi2薄膜光学性能的影响[J].太阳能学报,2006(12):1185-1190. |
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