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采用快速退火工艺处理的钛酸铋铁电薄膜,矫顽场Ec=9kV/cm,在室温下剩余极化强度 Pr=8μC/cm2;退火提高了钛酸铋薄膜的介电常数和材料的绝缘性,0.1M Hz附近薄膜材料的介电损耗tgδ<0.1.

参考文献

[1] Swartz S L;Wood V E.Ferroelectric thin films[J].Conde nsed Matter News,1992(05)
[2] Wang H;Fu L W;Shang S X .Preparation and properties of Bi4Ti 3O12 single-crys tal thin films by atmospheric pressure metalorganic chemical vapor deposition[J].Journal of Applied Physics,1993,73(11):1.
[3] SHU-YAN WU.A new ferroelectric memory device metal-ferroelectric-s emico nductor transistor[J].IEEE Transactions on Electron Devices,1974
[4] JOSHI P C;Krupanidhi S B .Switching,fatigue and retention in f err oelectric Bi4Ti3O12 thin films[J].Applied Physics Letters,1993,62
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