采用MOCVD工艺在Ts=440℃条件下制备组分Bi/Ti=1.44的非晶态薄膜,经过快速退火处理,制备高度择优取向的Bi4Ti3O12 铁电薄膜,在Ts=400℃条件下制备组分Bi/Ti=1.11的非晶态薄膜,经过快速退火处理,制备高度择优取向的Bi2Ti2O7薄膜,较好的退火温度为630℃、时间为60s;快速退火对薄膜组分的影响不大,在相同的退火温度下,生成43相还是22相取决于退火前薄膜材料的组分.
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