采用金属有机化学气相沉积工艺和快速退火工艺,在硅(100)基片上制备高度择优取向的Bi4Ti3O12铁电薄膜,运用X射线衍射术分析薄膜材料的结构,通过测量材料的电滞回线和漏电流密度,研究快速退火对Bi4Ti3O12薄膜电性能的影响.在优化的工艺条件下,Bi4Ti3O12铁电薄膜的剩余极化强度(Pr)为8μC/cm2,漏电流密度为10-11 A/cm2.
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