利用非平衡磁控溅射技术、扫描电子显微镜、X射线衍射仪和质谱仪等仪器研究了不同靶材、基体电流密度、靶电源特性和基体偏压等条件下二硫化钼薄膜的表面形貌、结构和生长特性.试验结果表明,在低密度冷压靶材、低电流密度、直流双脉冲电源和负偏压下,MoS2薄膜倾向按(002)平行于基体表面的层状方式生长;而在高密度热压靶材、高电流密度、单一直流脉冲电源和正偏压条件下,薄膜将以(002)基面与(100)、(110)棱面联合或以棱面为主的方式进行生长.沉积条件对MoS2薄膜生长特性的影响,是通过改变沉积速率和沉积粒子的能量而实现的.
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