采用射频磁控反应溅射法在蓝宝石和硅衬底上制备出Si3N4薄膜.利用XPS和FTIR分析了所制备薄膜的成分和结构,讨论了工艺参数对沉积速率的影响.结果表明,Si3N4薄膜的沉积速率随溅射气压的增大出现先增后减的趋势,衬底温度对沉积速率没有明显的影响.溅射气压的降低、衬底温度的提高将有利于获得高质量的Si3N4薄膜.
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