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利用化学包覆和热压烧结制备出晶界型3Y-TZP/BN纳米复相陶瓷,并与机械混合相同工艺热压烧结的微米复相陶瓷对比.结果表明:3Y-TZP/BN纳米复相陶瓷较对应的微米复相陶瓷保留了更多的t-ZrO2,并且形成精细均匀的显微组织;纳米h-BN第二相在基体中高度弥散,使引入的缺陷尺寸降低到100nm以下.这是造成材料能够获得优良力学性能的主要原因.在BN弥散相的体积分数达到20%时,3Y-ZrO2/BN纳米复相陶瓷保持了优异的强韧性,具有高质量的可加工性,并显示出类似塑性加工的特征.

参考文献

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[7] Wei-Tang Li;David R. McKenzie;William D. McFall;Qi-Chu Zhang .Effect of sputtering-gas pressure on properties of silicon nitride films produced by helicon plasma sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1):46-52.
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