利用化学包覆和热压烧结制备出晶界型3Y-TZP/BN纳米复相陶瓷,并与机械混合相同工艺热压烧结的微米复相陶瓷对比.结果表明:3Y-TZP/BN纳米复相陶瓷较对应的微米复相陶瓷保留了更多的t-ZrO2,并且形成精细均匀的显微组织;纳米h-BN第二相在基体中高度弥散,使引入的缺陷尺寸降低到100nm以下.这是造成材料能够获得优良力学性能的主要原因.在BN弥散相的体积分数达到20%时,3Y-ZrO2/BN纳米复相陶瓷保持了优异的强韧性,具有高质量的可加工性,并显示出类似塑性加工的特征.
参考文献
[1] | Borden Michael R;Joel Askinazi .Improving sapphire window strength[J].SPIE,1997,3060:246-249. |
[2] | Regan Thomas M;Harris Daniel C;Stroud Rhonda M et al.Compressive strengthening of sapphire by neutron irradiation[J].SPIE,2001,4375:31-40. |
[3] | Johnson Linda F;Moran Mark B .Compressive coatings for strengthened sapphire[J].SPIE,1999,3705:130-141. |
[4] | Frederick Schmid.Effects of crystal orientation and temperature on the strength of sapphire[J].Journal of the American Ceramic Society,1998 |
[5] | Harris Daniel C .Overview of progress in strengthening sapphire at elevated temperature[J].SPIE,1999,3705:5-6. |
[6] | 邱春文,陈雄文,石旺舟,欧阳艳东.磁控反应溅射法低温制备氮化硅薄膜[J].汕头大学学报(自然科学版),2003(02):35-39. |
[7] | Wei-Tang Li;David R. McKenzie;William D. McFall;Qi-Chu Zhang .Effect of sputtering-gas pressure on properties of silicon nitride films produced by helicon plasma sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1):46-52. |
[8] | 严一心;林鸿海.薄膜技术[M].北京:兵器工业出版社,1994 |
[9] | Rille E;Huter M .Optical properties of Si3N4 thin films produced by reactive d.c.-magnetron sputtering[J].SPIE,1994,2253:1338-1342. |
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