优化直流磁控溅射Ti-Ni-Cu薄膜的制备工艺参数,研究薄膜的组织结构、成分与工艺参数对其的影响规律.采用SEM、TEM、XRD及EMPA对其系统研究分析.结果表明,经650℃、0.5 h退火,溅射态的非晶无序结构的Ti-Ni-Cu薄膜完全晶化,获得形状记忆效应.室温下基体组织为立方结构的B2相.溅射薄膜的厚度与时间几乎呈线性变化;而薄膜的沉积速率随着溅射功率的增大而升高,但溅射功率再增大则沉积速率降低;薄膜的成分随溅射功率、工作气压及时间的变化基本一致,不存在成分离散问题.
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