为提高玻璃与硅的阳极键合技术在微电子制造和封装过程中的稳定性,对硼硅玻璃与硅进行了阳极键合试验.通过工艺试验,从固态热力学角度分析键合温度和电压对硅/玻璃键合质量的影响;通过扫描电镜对硅/玻璃键合界面的微观结构进行分析,认为键合温度和界面区的强电场是形成界面过渡层的主要因素.界面过渡层的形成促进了硅,玻璃的永久键合.
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