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  4. 氧化锌薄膜的p型掺杂及其制备方法

兵器材料科学与工程 , 2009, 32(3): 99-104. doi: 10.3969/j.issn.1004-244X.2009.03.030

氧化锌薄膜的p型掺杂及其制备方法

许积文 1, , 王华 2, , 任明放 3, , 杨玲 4,

1.桂林电子科技大学,信息材料科学与工程系,广西,桂林,541004;桂林电子科技大学,广西信息材料重点实验室,广西,桂林,541004

2.桂林电子科技大学,信息材料科学与工程系,广西,桂林,541004;桂林电子科技大学,广西信息材料重点实验室,广西,桂林,541004

3.桂林电子科技大学,信息材料科学与工程系,广西,桂林,541004

4.桂林电子科技大学,信息材料科学与工程系,广西,桂林,541004

基金项目:   广西高校百名中青年学科带头人资助计划(RC20060809014)  

关键词： ZnO , P型掺杂 , 综述 , 制备方法

Doping mechanism and preparing technology of p-type ZnO

氧化锌(ZnO)是直接宽带隙半导体材料,有高达60 meV的激子束缚能,是下一代短波长光电材料的潜在材料.有效的p型ZnO薄膜掺杂是实现ZnO基光电器件的基础,虽然取得一定的进展,但从性能上来看,远远不及n型ZnO薄膜,而且重复性差.分析难于实现氧化锌p型掺杂的主要原因,综述近年来出现的p型掺杂的新方法、掺杂机制及其有效的实现工艺,指出今后的发展趋势和研究重点.

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