采用直流磁控溅射工艺,室温下在载玻片上制备ZnO:Al透明导电薄膜.研究Al掺杂和溅射功率对薄膜生长取向、微观结构和电阻率的影响.研究表明:不同溅射功率下Al掺杂ZnO薄膜均为高度c-轴择优取向生长;在1%～3%(质量分数)的掺杂范围内,薄膜的电阻率随掺杂孱的增加而减小,掺杂的质量分数超过3%后,薄膜的电阻率又有所增大.溅射功率通过改变晶粒尺寸和晶界所产生的散射作用而影响薄膜的导电性能,溅射功率低于100 W时,薄膜的电阻率随功率增加而明显降低,但超过100 W后,薄膜的电阻率下降趋缓,并最终趋于平稳.在Al掺杂的质量分数为3%、溅射功率为100 W的条件下,可获得2.3×10~(-3) Ω·cm的最低电阻率.
Abstract ZnO:Al thin films based on Al doped ZnO ceramic target were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature.The effects of Al doping content and sputtering power on microstructure，growth behavior and electrical properties of ZnO:Al thin films were investigated.The experimental results show that Al-doped ZnO thin films exhibit high preferred c-axis-orientation.The resistivity of ZnO:Al films first decreases with the increase of alumina content under 3%(mass fraction)，then increases when the alumina content is over 3%(mass fraction).The sputtering power also effects on the resistivity of ZnO:Al films due to the change of dispersion related the grain and crystal boundary，which decreases sharply with the increase of sputtering power from 60 W to 100 W.The lowest resistivity of 2.3×10-3Ω·cm can be obtained when the alumina content is 3%(mass fraction)and the sputtering power is 100 W.
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