采用溶胶-凝胶(sol-gel)工艺直接在掺锡氧化铟(ITO)玻璃衬底上制备生长(Pb0.92La0.08) (Zr0.53,Ti0.47)O3(PLZT)铁电薄膜,研究不同的退火温度对PLZT薄膜生长行为、电性能及光学性能的影响.结果表明,经650℃退火PLZT薄膜具有较好矫顽场强(55 kVcm)和剩余极化强度(38μC/cm2),薄膜的漏电流可达最低值(7.1 nA),薄膜具有较好的介电性及透光性.
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