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以乙炔为气源,用等离子体基脉冲偏压沉积(plasma based pulsd bias deposition缩写PBPBD)技术进行了不同负脉冲偏压条件下制备DLC膜的试验.通过X射线光电子谱(XPS)、激光喇曼光谱[Raman]以及电阻分析方法考察了负脉冲偏压幅值对DLC膜化学结构的影响.结果表明由-50 kV到-10 kV随负脉冲偏压降低,DLC膜中SP3键分数单调增加,但当脉冲偏压为0时形成高电阻的类聚合物膜,说明荷能离子的轰击作用是形成DLC化学结构的必要条件.键角混乱度和SP2簇团尺寸与脉冲偏压之间不具有单调关系,在中等幅值负脉冲偏压条件下,键角混乱度较大且SP2簇团尺寸细小.

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