介绍了Sol-Gel法,并对近年来Sol-Gel法制备PLZT系铁电薄膜材料的有关研究进行了分析和总结,详细介绍了Sol-Gel法制备PLZT系铁电薄膜材料的各种原料及工艺流程.
参考文献
[1] | 王弘,王民.铁电薄膜与集成铁电学[J].高技术通讯,1995(01):53-58. |
[2] | 朱信华,刘治国.铁电薄膜、多层膜及异质结构研究[J].物理,1999(02):68. |
[3] | MASAKI M;HIROSHI I;KYAW SOE K K et al.Preparation and properties of PbTiO3 films by Sol-Gel processing[J].Japanese Journal of Applied Physics,1993,32(09):4136-4140. |
[4] | 刘芸;张良莹;姚熹 .钛酸铅系薄膜的热释电性能及其应用[J].压电与声光,1996,18(03):194-200. |
[5] | 罗民;曹传宝;汪浩 等.溶胶-凝胶法制备(PLZT)铁电薄膜及掺杂对介电性能的影响[J].功能材料,1998,29(z1):1097-1100. |
[6] | JOON SUNG L;CHANGJUNG K;DAE SUNG Y et al.Effects of seeding layer on perovskite transformation, microstructure and transmittance of Sol-Gel-processed lanthanum-modified lead zirconate titanate films[J].Japanese Journal of Applied Physics,1994,33(01):260-265. |
[7] | 顾豪爽;邝安祥;包定华 等.c轴取向PbTiO3薄膜的制备与结构分析[J].科学通报,1992,37(17):1561-1562. |
[8] | 刘梅冬,陈实,曾亦可,饶韫华,李楚容,陈磊,潘晓光,邓传益.铅基钙钛矿型结构铁电薄膜的介电及热释电性能研究[J].功能材料,2000(01):100-101. |
[9] | Takafumi K;TADANORI S;TOSHIO T .Preparation of ferroelectric (Pb,La)(Zr,Ti)O3 thin films by Sol-Gel process and dielectric properties[J].Japanese Journal of Applied Physics,1991,30(09):2178-2181. |
[10] | 宋世庚 .PZT铁电薄膜的溶胶凝胶法制备、退火行为及其物理性质的研究[D].中国科学院上海冶金研究所,1997. |
[11] | 阎培渝,苏涛,李龙土,张孝文.用溶胶-凝法制备锆钛铅铁电薄膜[J].高技术通讯,1995(06):43-46. |
[12] | Katsumi S;TAKASHI N;KAZUHIRO H et al.Preparation of Pb (Zr,Ti)O3 films on Pt/Ti/Ta electrodes by Sol-Gel process[J].Japanese Journal of Applied Physics,1993,32(09):4144-4146. |
[13] | 翟继卫;吴小清;徐卓 等.溶胶-凝胶法制备PZT铁电薄膜的结构特征研究[J].功能材料,1999,30(05):526-528. |
[14] | 刘大格,张洪喜,王中,赵连城.溶胶-凝胶法制备PZT薄膜晶化过程的跟踪监测[J].硅酸盐学报,1999(02):193-201. |
[15] | KYAWSOE K K;MASAKI M;IKUO S .Sol-Gel processing of Pb1-xLaxTi1-x/4O3 thin films[J].Japanese Journal of Applied Physics,1996,35(01):205-209. |
[16] | 曹伟;莫小洪;田杰 等.采用Zr(NO3)4制备高取向度PZT铁电薄膜的溶胶-凝胶工艺[J].功能材料,1998,29(z1):543-545. |
[17] | Yutaka O;TOSHIMASA T;YASUTAKA T .Dielectric properties of lead zirconate titanate thin film fabricated on In2O3:Sn substrate by Sol-Gel method[J].Japanese Journal of Applied Physics,1993,32(09):4163-4167. |
[18] | 宋志棠;任巍;张良莹 等.由Pb过量引起的空间电荷对PLT铁电薄膜电性能的影响[J].功能材料,1998,29(z1):512-516. |
[19] | KAZUSHI A;TORU M;TAKASHI H et al.Ferroelectric properties of Sol-Gel derived Pb(Zr,Ti)O3 thin films[J].Japanese Journal of Applied Physics,1993,32(09):4150-4153. |
[20] | Norga GJ.;Wouters DJ.;Maes HE.;Fe L. .Effect of RuO2 growth temperature on ferroelectric properties of RuO2/Pb(Zr, Ti)O-3/RuO2/Pt capacitors[J].Applied physics letters,2000(10):1318-1320. |
[21] | 孙顺明.铁电薄膜的材料系统与功能性质[J].硅酸盐通报,1999(04):71-75. |
[22] | 饶韫华;刘梅冬;卢春如 等.溶胶-凝胶方法制备PZT铁电薄膜材料的研究[J].功能材料,1994,25(06):539-541. |
[23] | 卢朝靖;蒋昌忠;王世敏 等.在Pt/SrTiO3衬底上制备高c轴取向的PbTiO3薄膜[J].科学通报,1993,38(14):1273-1275. |
[24] | 仇萍荪;丁爱丽;何夕云 等.Sol-gel法制备PZT铁电薄膜的退火条件研究[J].功能材料,1998,29(z1):517-519. |
[25] | KATSUHIRO A;YUKIO F A;AKITOSHI N .Preparation of<100>-oriented lead-zirconate-titanate films by Sol-Gel technique[J].Japanese Journal of Applied Physics,1993,32(09):4147-4149. |
[26] | 孟祥建,程建功,李标,唐军,叶红娟,郭少令,褚君浩.用改进的sol-gel法制备锆钛酸铅薄膜及其物相转化的研究[J].物理学报,2000(04):811-815. |
[27] | 屈新萍;丁爱丽;罗维根 等.Pt/Ti电极的扩散行为及其对铁电薄膜的影响[J].无机材料学报,1996,11(03):499-502. |
[28] | 陈篮,李辉遒,张曰理.PLZT铁电薄膜的物理特性研究[J].功能材料,2000(03):287. |
[29] | 包定华.用金属有机化合物制备铁电薄膜:工艺及进展[J].硅酸盐通报,1995(02):33-37. |
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