对前驱体法制备的Si-C-N陶瓷粉末在X波段(8.2～12.4GHz)的雷达波吸收性能进行了研究.通过共氨解甲基氯硅烷和二苯基二氯硅烷(Ph2SiCl2),得到含苯基聚硅氮烷前驱体,经高温裂解和球磨获得Si-C-N陶瓷粉末.实验结果表明,Si-C-N陶瓷能够吸收X波段的雷达波,并且有机硅单体中Ph2SiCl2的摩尔比对最终的Si-C-N陶瓷吸波性能具有显著的影响.当Ph2SiCl2的含量为5%时,Si-C-N陶瓷对X波段雷达波具有最好的反射损耗,在9.1～12.4GHz的范围内,反射损耗R.L.小于-10dB即吸收带宽为3.3GHz, 在10.6GHz处具有的最大反射损耗为-15dB.
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