磁控溅射ITO薄膜的退火处理

材料科学与工艺, 2008, 16(2): 264-266. doi: 10.3969/j.issn.1005-0299.2008.02.029

磁控溅射ITO薄膜的退火处理

王军 ^1, , 成建波 ^2, , 陈文彬 ^3, , 杨刚 ^4, , 蒋亚东 ^5, , 蒋泉 ^6, , 杨健君 ^7,

1.电子科技大学,光电信息学院,成都,610054

2.电子科技大学,光电信息学院,成都,610054

3.电子科技大学,光电信息学院,成都,610054

4.电子科技大学,光电信息学院,成都,610054

5.电子科技大学,光电信息学院,成都,610054

6.电子科技大学,光电信息学院,成都,610054

7.电子科技大学,光电信息学院,成都,610054

基金项目: 电子科技大学-渐江阳光集团联合OLED器件研发项目(W050317)

关键词：薄膜 , 氧化铟锡(ITO) , 退火 , 直流磁控溅射 , 方阻

Annealing effect on ITO films prepared by DC magnetron sputtering

采用直流磁控溅射方法在室温下玻璃基板上制备ITO(Indium tin oxide)薄膜,并在真空中不同温度(100℃～400℃)下退火处理.研究了退火对薄膜表面形貌、电光特性的影响.XRD测试发现薄膜在200℃退火后结晶,优选晶向为(222).随退火温度升高,方块电阻迅速下降,表面更加平整,薄膜在可见光范围平均透过率提高到85%.

参考文献

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磁控溅射ITO薄膜的退火处理

Annealing effect on ITO films prepared by DC magnetron sputtering

参考文献