采用化学气相渗透(CVI)结合溶液浸渍法制备C/SiC-W多元基复合材料,利用XRD和SEM对材料的物相组成及微观结构进行表征,并对制备过程的反应机理进行初步探讨.结果表明,W在复合材料中成颗粒团聚状,它不仅能渗入到复合材料的纤维束间,还渗入到纤维束内.制得C/SiC-W复合材料的密度为4.1g/cm3,开气孔率为12%.
参考文献
[1] | 张立同,成来飞,徐永东.新型碳化硅陶瓷基复合材料的研究进展[J].航空制造技术,2003(01):24-32. |
[2] | 苏君明.石墨渗铜喉衬材料抗热震性能评价[J].新型炭材料,1998(03):21. |
[3] | Son SJ;Park KH;Katoh Y;Kohyama A .Interfacial reactions and mechanical properties of W-SiC in-situ joints for plasma facing components[J].Journal of Nuclear Materials: Materials Aspects of Fission and Fusion,2004(0):1549-1552. |
[4] | KUIJLAARS K J;KLEIJN C R;VAN DEN AKKER H E A.Modeling of selective tungsten low-pressure chemical vapor deposition[J].Thin Solid Films,1996(290-291):406-410. |
[5] | Lackner A.;Filzwieser A. .In the Reduction of Tungsten Blue Oxide in a Stream of Hydrogen[J].International Journal of Refractory Metals & Hard Materials,1996(5/6):383-391. |
[6] | TAO Z J.Investigation of hydrogen reduction process for blue tungstic oxide[J].International Journal of Refractory Metals and Hard Materials,1989(08):179-184. |
[7] | Yin XW.;Cheng LF.;Zhang LT.;Xu YD. .Oxidation behaviors of C/SiC in the oxidizing environments containing water vapor[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2003(1/2):47-53. |
[8] | 王金亮.毛细管内蒸发传热机理的分析[J].化工学报,1999(04):435-442. |
[9] | 施明恒;虞维平;王补宣 .多孔介质传热传质研究的现状和展望[J].东南大学学报(自然科学版),1994,24:1-6. |
[10] | 殷小玮 .3DC/SiC复合材料的环境氧化行为[D].西北工业大学,2001. |
[11] | SCHUBERT W D.Kinetics of the hydrogen reduction of tungsten oxides[J].International Journal of Refractory Metals and Hard Materials,1990(09):178-191. |
[12] | ANGASTINIOTIS N C .Synthesis of nanostructured tungsten and tungsten-base phases[D].New Brunswick:The State University of New Jersey,1994. |
[13] | 朱伯仲;李新生 .钨酸铵的热分解机理[J].郑州大学学报(自然科学版),1995,27(04):85-88. |
[14] | Warren A.;Nylund A. .Oxidation of Tungsten and Tungsten Carbide in Dry and Humid Atmospheres[J].International Journal of Refractory Metals & Hard Materials,1996(5/6):345-353. |
[15] | 王平 .制取亚微米级WC粉的研究朱伯仲[J].硬质合金,1997,14(04):218-221. |
[16] | Seng WF.;Barnes PA. .Calculations of tungsten silicide and carbide formation on SiC using the Gibbs free energy[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(1):13-18. |
[17] | GOESMANN F;SCHMID-FETZER R.Stability of W as electrical contact on 6H-SiC:phase relations and interface reactions in the ternary system W-Si-C[J].Materials Science and Engineering B,1995(34):224-231. |
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