研究CH3SiCl3-H2-Ar体系中在石墨表面化学气相沉积SiC涂层工艺,并对涂层形貌进行SEM分析.考察沉积温度、气体比例、气体流量以及稀释气体含量对化学气相沉积SiC涂层的显微结构的影响.结果表明,在温度1100℃,H2∶ MTS=5 ∶ 3,气体流量8L/min,稀释气体1L/min时,制备的涂层致密光滑.其中涂层的形貌对温度最敏感,当沉积温度达到1100℃时,CVD SiC涂层表面致密且光滑.
参考文献
| [1] | 张玉娣,张长瑞,刘荣军,刘晓阳.C/SiC复合材料与CVD SiC涂层的结合性能研究[J].航空材料学报,2004(04):27-29. |
| [2] | 邓清,肖鹏,熊翔.沉积温度对SiC涂层微观结构及组成的影响[J].粉末冶金材料科学与工程,2006(05):304-309. |
| [3] | 付志强,唐春和,梁彤祥,李自强.SiC涂层对高温气冷堆用石墨摩擦磨损性能的影响[J].金属热处理,2005(09):13-16. |
| [4] | BYUNG JIN CHOI;SUN HO JEUN;DAI RYONG KIM .The effects of C3H8 on the chemical vapor deposition of silicon carbide in the CH3SiCl3 + H2 system[J].Department of Metallurgical Engineering,1991,20(04):860-862. |
| [5] | Georges Chollon;Roger Naslain;Calvin Prentice .High temperature properties of SIC and diamond CVD-monofilaments[J].Journal of the European Ceramic Society,2005(11):1929-1942. |
| [6] | 蔡杉 .SiC纤维CVD工艺及其增强Ti机复合材料界面与性能研究[D].北京:北京航空材料研究所,2005. |
| [7] | CHOU B J;KIM D Y .Growth of silicon carbide by chemical vapor deposition[J].Journal of Materials Science Letters,1991,10:860-862. |
| [8] | 刘荣军,张长瑞,刘晓阳,周新贵,曹英斌.CVD过程中温度对SiC涂层沉积速率及组织结构的影响[J].航空材料学报,2004(04):22-26. |
| [9] | Yongdong Xu;Laifei Cheng;Litong Zhang .Composition, microstructure, and thermal stability of silicon carbide chemical vapor deposited at low temperatures[J].Journal of Materials Processing Technology,2000(1/3):47-51. |
| [10] | Y. Xu .Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere[J].Journal of Materials Science,1999(3):551-555. |
| [11] | TSAI C Y .Kinetic study of silicon carbide deposited from methyltrichlorosilane precursor[J].Journal of Materials Research,1994,9(01):104-111. |
| [12] | 王新华,YOSHIDA T.SiC/C薄膜的制备及其力学性能[J].复合材料学报,2005(01):74-78. |
| [13] | KINGON A I;LUTZ L J .Thermodynamic calculation for the chemical vapor deposition of silicon carbide[J].Journal of the American Ceramic Society,1983,66(08):558-566. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%